Semiconductor device having voltage regulators embedded in layered package

ABSTRACT

A computing chip can include one or more voltage regulators to decrease a standard voltage, such as twelve volts, to a relatively low operating voltage of its processing cores, typically around one volt. Because the power consumed by the cores can be substantial, such as three hundred watts or more, it is desirable to locate the voltage regulators as close as possible to the cores, to reduce the distances that relatively large currents have to travel in the chip circuitry. The voltage regulators can be embedded within the package, such as in a layered structure, in a layer that electrically connects to the cores. While the cores are typically manufactured using the smallest possible lithographic features, the voltage regulators are less demanding and can instead use relatively large lithographic features, which can be formed using relatively old technology, and can therefore be relatively inexpensive.

FIELD OF THE DISCLOSURE

The present disclosure relates generally to voltage regulators for asemiconductor device.

BACKGROUND OF THE DISCLOSURE

A semiconductor device can include one or more voltage regulators todecrease a standard voltage, such as 12 volts, to a relatively lowoperating voltage of its processing cores, typically around one volt,such as 0.7 volts, 1.2 volts, or 1.4 volts. Because the power consumedby the cores can be substantial, such as about three hundred watts, itis desirable to locate the voltage regulators as close as possible tothe cores, to reduce the distances that relatively large currents haveto travel in order to supply power to the device circuitry.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross-sectional side view of an example of asemiconductor device having voltage regulators embedded in a layeredpackage, in accordance with some examples.

FIG. 2 shows a perspective view of an example of relative orientationsof the semiconductor dies and the voltage regulators of FIG. 1, inaccordance with some examples.

FIG. 3 illustrates a system level diagram, depicting an example of anelectronic device (e.g., system) including the device and system asdescribed in the present disclosure.

FIG. 4 shows a flowchart of an example of a method for regulatingvoltage in a semiconductor device, in accordance with some examples.

Corresponding reference characters indicate corresponding partsthroughout the several views. Elements in the drawings are notnecessarily drawn to scale. The configurations shown in the drawings aremerely examples, and should not be construed as limiting the scope ofthe inventive subject matter in any manner.

DETAILED DESCRIPTION

To position voltage regulators as close as possible to processing coresin a computing chip, and thereby reduce the distances that relativelylarge currents have to travel in the chip circuitry, the voltageregulators can be embedded within the package, such as in a layer of alayered structure, that electrically connects to the cores. In the textthat follows, the terms computing chip and semiconductor device are usedinterchangeably, and the terms processing core and semiconductor die arealso used interchangeably.

In the figures and the text that follows, the terms “top”, “bottom”,“horizontal”, and “vertical” are used to show orientations of particularfeatures on particular elements, or relative orientations of one elementto another element. The designations of horizontal and vertical are usedmerely for convenience and clarity, and are not intended to representabsolute orientation or direction. For example, a “top” surface of anelement remains a top surface regardless of an absolute orientation ofthe element, even if the element is inverted during storage or use. Thisdocument uses the common convention of a chip package being positionedhorizontally on top of a horizontal motherboard, which establishesdirections of up and down, and top and bottom, relative to thisconvention.

There are advantages to positioning the voltage regulators within thepackage.

As a first advantage, compared with a configuration in which the voltageregulators are surface-mounted beside the semiconductor device,positioning the voltage regulators within the package greatly reducesthe distances that relatively large currents have to travel in the chipcircuitry. The distance between a surface-mounted voltage regulator acore in an interior of the semiconductor device can approach half of adimension of the semiconductor device. For example, for a die sizecomparable to 20 mm, propagating current of about 100 amperes over a 10mm length can be impractical.

As a second advantage, while the cores are typically manufactured usingthe smallest possible lithographic features, the voltage regulators areless demanding and can instead use relatively large lithographicfeatures.

In general, for cores in a semiconductor device, there is great benefitto making the transistors as small as possible. For example, doing socan increase the number of transistors per area in the cores, which canincrease computing power and can reduce the cost per transistor. Theincrease in transistor density over time has become known as Moore'sLaw.

Surprisingly, it is found that voltage conversion circuitry does notbenefit from making the transistors as small as possible. For voltageconversion, it is found that the factor that limits the power can be theactual connections, or bumps, between the silicon die and the package,rather than the power transistors. In other words, improving the voltageconversion transistors by making them smaller may not allow an increasein the power capacity. As a result, it can be beneficial to keep thevoltage conversion circuit elements relatively large, compared toelements used in the cores.

Keeping the voltage conversion transistors relatively large, compared tothe core transistors, can have an unexpected benefit. For example, whilethe core transistors are typically manufactured using the mostcutting-edge lithographic techniques, the relatively large voltageconversion transistors can be manufactured using relatively oldlithographic technology that can date back one or more productgenerations. This relatively old technology can be significantly lessexpensive than the cutting-edge technology, because it can utilizeequipment that has depreciated significantly over time. As a result,compared to a case in which the most cutting-edge technology is used toproduce the voltage conversion transistors, such as if the voltageconversion were embedded in the core circuitry, using the relatively oldlithographic technology can result in a substantial cost savings.

As a third advantage, positioning the voltage regulators within thepackage can avoid redesigning and debugging the voltage regulatorcircuitry for every process node.

As a fourth advantage, positioning the voltage regulators within thepackage can avoid physically or electrically interfering with electricalcontact arrays of lands, bumps, or pins, which may be on the bottomsurface of the package.

As a fifth advantage, positioning the voltage regulators within thepackage can avoid a voltage regulator yield loss associated with largerserver chips, because the yield of the voltage regulators (made usingrelatively old and reliable technology) is relatively high.

As a sixth advantage, because the voltage regulators are embedded withinthe package prior to adding the relatively expensive compute silicon tothe package, the package and its embedded voltage regulators can betested prior to adding the relatively expensive compute silicon. Thus,any malfunctioning voltage regulators may not cause the loss of fullyfunctioning and potentially expensive compute silicon.

As a seventh advantage, positioning the voltage regulators within thepackage can allow direct access to every core in a server'stwo-dimensional array of cores.

As an eighth advantage, a voltage regulator embedded in the package maybe formed with gallium nitride, silicon carbide, or some othertransistor technology, which can have some beneficial characteristics,such as being capable of handling higher voltages than silicon, beingcapable of handling higher temperatures than silicon, and others.

Other advantages are also possible.

A package can be formed on a fiber-reinforced substrate (also known as aglass-reinforced substrate). The substrate can be generally planar, andcan be generally rigid enough to mechanically support additional layersand components that can be subsequently attached to the substrate. Thesubstrate can be clad in copper. The copper cladding can be patterned toform a two-layer circuit board. Additional layers can be built up,outside of the cladding and substrate. The additional build-up layerscan be formed on a front side of the substrate and on a back side of thesubstrate.

The additional build-up layers typically use blind, buried vias, so thateach layer can have its own vias that connect to a previous layer. Incontrast with an earlier generation of packaging, where a via wastypically formed by mechanically drilling through multiple layers,modern packaging can typically avoid having two layers share a commonvia.

Embedded bridge technology can allow a pre-formed piece of silicon, withits features and circuitry elements, to be embedded in a layeredcircuitry structure. To form an embedded bridge, a hole can be cutthrough one or more build-up layers. A piece of silicon can be placed onthe last layer under the hole and fixed in place (through gluing,braising, or the like). A subsequent layer can be laser ablated to formvias to the silicon. In this manner, the silicon bridge can be processedlike any layer, but can include features that can be much finer thanwhat can be achieved in the typical layer processing.

While embedded bridge technology typically allows finer features to beincorporated into the layered structure, it is found that thistechnology can also be used to embed the DC-to-DC voltage conversioncircuitry, with its relatively coarse features, into the layeredstructure.

The embedded bridge technology, when used for voltage regulation, canallow for so-called “air core” inductors to be used in the circuitry. Inreality, the inductors can be formed using epoxy as a material, whichhas the same magnetic properties as air. Although epoxy can have morecapacitance than air, the capacitance for voltage regulation circuitrycan be negligible at the frequencies involved with voltage regulation,rendering the difference insignificant.

In voltage regulation circuitry, the embedded silicon can be embedded ina particular layer in a stack of layers. In some examples, the embeddedsilicon can be embedded on a front side of the substrate, on the sameside of the package as the processing cores. In other examples, theembedded bridge can be embedded on a back side of the substrate, wherethe electrical connections tend to be positioned. In some examples,embedding the voltage regulation circuitry on the back side of thepackage (e.g., away from the point-of-load silicon) can be beneficial,because the package thickness itself can form an inductance that issuitable for connecting the voltage regulation circuitry to the load,optionally without the need for including an explicit inductorcomponent.

It is instructive to discuss the components that are used in typicalvoltage regulation circuitry. To reduce a voltage, a voltage regulationcircuit can pass the voltage through four transistors, arranged inseries. The first two transistors can be PMOS, and the second twotransistors can be NMOS. The first transistor can accept an inputvoltage. The last transistor can be connected to ground. The middle twotransistors (one PMOS, one NMOS) can have gates that are attached to aDC voltage. The outer two transistors (also one PMOS, one NMOS) can beswitched at a particular frequency and duty cycle. The midpoint betweenthe middle two transistors can be connected to a first end of aninductor. The second end of the inductor can be connected to a capacitorto ground and to a load. For typical voltage regulation circuits thatare included with a motherboard, a typical switching frequency can be onthe order of 1 MHz, or below. For typical voltage regulation circuitsthat are included with the packaging, as discussed herein, a typicalswitching frequency can be on the order of 100 MHz to 120 MHz, althoughother frequencies can also be used.

Because the switching frequency can be substantially higher than what iscommonly used on a motherboard, the value of inductance can besubstantially less than what is commonly used on a motherboard. Forexample, the inductor for the package-based voltage regulation circuitscan have a value of 1 nH, compared to a value of 200 nH for a typicalmotherboard-based voltage regulation circuits. Advantageously, such alow value of inductance can be achieved by residual geometry in thecircuit, without using an explicit inductor component. For example, ahole drilled through a board, with nothing else in the vicinity, canhave an inductance value on the order of 1 nH. Because the package-basedvoltage regulation circuits can rely on ambient structures in thepackage to achieve the low inductance value, the package-based voltageregulation circuits can eliminate the use of an explicit inductorcomponent, which is beneficial.

FIG. 1 shows a cross-sectional side view of an example of asemiconductor device 10 having voltage regulators embedded in a layeredpackage, in accordance with some examples. The configuration of FIG. 1is but one example of such a semiconductor device; other suitableconfigurations can also be used.

A package 12 can include circuitry arranged in layers that areelectrically connected to one another through electrically conductivevias.

A semiconductor die 14A can be positioned on a front side 16 of thepackage 12 and electrically connected to the package 12. In someexamples, the semiconductor die 14A can be one of a plurality ofsemiconductor dies 14A-D positioned on the front side 16 of the package12 and electrically connected to the package 12. In some examples, thesemiconductor dies 14A-D can each include a capacitor connected toground. Other electrical configurations can also be used.

An electrical connection 18A can be positioned on a back side 20 of thepackage 12 and electrically connected to the package 12. In someexamples, the electrical connection 18A can be one of a plurality ofelectrical connections 18A-K positioned on the back side 20 of thepackage 12 and electrically connected to the package 12. In someexamples, the electrical connections 18A-K can be smaller than thesemiconductor dies 14A-D and positioned more closely together than thesemiconductor dies 14A-D, so that the electrical connections 18A-K andsemiconductor dies 14A-D need not be in a one-to-one correspondence. Theelectrical connections 18A-K can include one or more of input/outputlands, pins, balls edge connectors, or other suitable electricallyconductive elements. The electrical connections 18A-K can be configuredto electrically connect to corresponding connectors on an additionalmating element when the package 12 is brought into contact with themating element. In addition to the electrical connections 18A-K, theback side 20 of the package 12 can additionally include one or morecapacitors, inductors, resistors, or other suitable electricalcomponents.

A voltage regulator 22A can be embedded within the package 12. Thevoltage regulator 22A can accept a first voltage from an electricalconnection 18C, reduce the first voltage to a second voltage, anddeliver the second voltage to a respective semiconductor die 14A. Insome examples, the voltage regulator 22A can accept the first voltagefrom multiple electrical connections 18A-K in parallel. Accepting thevoltage in parallel can spread the current over multiple electricalconnections 18A-K, which can improve reliability and reduce the risk ofdamaging a particular connection. Because providing a voltage generallyrequires two electrical connections (such as a voltage rail and a groundrail), it will be understood that the package can also provide a groundrail (not shown), which can electrically connect to the package 12, tothe electrical connections 18A-K, to an external device connected to theelectrical connections 18A-K, and to the semiconductor dies 14A-D, asneeded.

In particular, the voltage regulator 22A can be embedded within thepackage 12, rather than grown as a layer within the package 12, orformed integrally with the package 12. Specifically, the voltageregulator 22A can be formed external to the package 12, then attached tothe package 12 by the embedding procedure. Forming the voltage regulator22A external to the package allows additional flexibility in theprocedures used to fabricate the voltage regulator 22A. In someexamples, the voltage regulator 22A can include voltage regulationcircuitry positioned on a base. In some examples, the base can be formedfrom a suitable semiconductor material, such as silicon, galliumnitride, silicon carbide, or others. In some examples, the voltageregulator 22A can be embedded by placing the voltage regulationcircuitry and the base onto a first layer of the package 12, thenforming a second layer of the package 12 on the voltage regulationcircuitry.

In some examples, the voltage regulator 22A can be formed usingrelatively coarse features, compared with the semiconductor dies 14A-D.Such coarse features can be produced relatively inexpensively, comparedto the relatively small features of the semiconductor dies 14A-D. Insome examples, the voltage regulation circuitry can include featureshaving a first minimum feature size. In some examples, the semiconductordie can include features having a second minimum feature size smallerthan the first minimum feature size. In some examples, the feature sizecan represent a size of a transistor on the voltage regulator 22A or thesemiconductor dies 14A-D. In some examples, the voltage regulator 22Acan be formed from a suitable semiconductor material, such as a silicon,gallium nitride, silicon carbide, or others.

In some examples, the package 12 can be formed as layers disposed on asubstrate. In some examples, the voltage regulator 22A can be positionedbetween the substrate and the electrical connection 18A. In otherexamples, the voltage regulator 22A can be positioned between thesubstrate and the semiconductor dies 14A-D.

In some examples, the first and second voltages can be direct current(e.g. time-invariant or slowly-varying). It is intended that the termdirect current can include a relatively small oscillatory voltage orcurrent, on top of a relatively large slowly-varying or time-invariantvoltage or current. It will be understood that the magnitude oramplitude of the small oscillatory voltage or current can beinsignificantly small, and/or the frequency of the small oscillatoryvoltage can be high enough such that downstream components effectivelyaverage out the oscillatory voltage over time.

In some examples, the voltage regulator 22A can include four transistorsthat are arranged in series. A first of the four transistors can be aPMOS transistor switched at a frequency and a duty cycle. A second ofthe four transistors can be a PMOS transistor having a gate attached toa direct current voltage. A third of the four transistors can be an NMOStransistor having a gate attached to the direct current voltage. Afourth of the four transistors can be an NMOS transistor switched at thefrequency and the duty cycle. This is but one example of components in avoltage regulator 22A; other suitable components can also be used.

In some examples, the voltage regulator 22A can be one of a plurality ofvoltage regulators 22A-D embedded within the package 12. In someexamples, the voltage regulators 22A-D and the semiconductor dies 14A-Dcan be arranged in a one-to-one correspondence. In some examples, theplurality of voltage regulators 22A-D can be embedded within a singlelayer of the package 12.

In some examples, each voltage regulator 22A-D can be electricallyconnected to a respective semiconductor die 14A-D by an electrical pathhaving an inductance 24A-D. In some examples, the inductance 24A-D canbe provided by a structure of the package 12, such that the electricalpath lacks an explicit inductor component. For example, a hole throughone or more layers of the package may produce enough electricalinductance, by itself, to operate with the voltage regulator circuitry.In other examples, explicit inductor components can be used.

FIG. 2 shows a perspective view of an example of relative orientationsof the semiconductor dies 14 and the voltage regulators 22 of FIG. 1, inaccordance with some examples. The example of FIG. 2 is but one example;other configurations can also be used.

In some examples, the plurality of semiconductor dies 14 can be arrangedas a first two-dimensional array 26, the plurality of voltage regulators22 can be arranged as a second two-dimensional array 28, and the secondtwo-dimensional array can be offset from the first two-dimensional arrayin a direction 30 orthogonal to the first two-dimensional array. In someexamples, the plurality of semiconductor dies 14 can be arranged inclusters of four semiconductor dies 14 that share a common corner 32. Insome examples, the plurality of voltage regulators 22 can be arranged inclusters of four voltage regulators 22 that share a common corner 34. Insome examples, the common corners 34 of the voltage regulators 22 can beoffset from the common corners 32 of the semiconductor dies 14 in thedirection 30 orthogonal to the first two-dimensional array 26. This isbut one possible geometry for the semiconductor dies 14 and the voltageregulators 22; other suitable geometries can also be used.

FIG. 3 illustrates a system level diagram, depicting an example of anelectronic device (e.g., system) including the device and system asdescribed in the present disclosure. FIG. 3 is included to show anexample of a higher-level device application for the device and system.In one embodiment, system 300 includes, but is not limited to, a desktopcomputer, a laptop computer, a netbook, a tablet, a notebook computer, apersonal digital assistant (PDA), a server, a workstation, a cellulartelephone, a mobile computing device, a smart phone, an Internetappliance or any other type of computing device. In some embodiments,system 300 is a system on a chip (SOC) system.

In one embodiment, processor 310 has one or more processing cores 312and 312N, where 312N represents the Nth processing core inside processor310 where N is a positive integer. In one embodiment, system 300includes multiple processors including 310 and 305, where processor 305has logic similar or identical to the logic of processor 310. In someembodiments, processing core 312 includes, but is not limited to,pre-fetch logic to fetch instructions, decode logic to decode theinstructions, execution logic to execute instructions and the like. Insome embodiments, processor 310 has a cache memory 316 to cacheinstructions and/or data for system 300. Cache memory 316 may beorganized into a hierarchal structure including one or more levels ofcache memory.

In some embodiments, processor 310 includes a memory controller 314,which is operable to perform functions that enable the processor 310 toaccess and communicate with memory 330 that includes a volatile memory332 and/or a non-volatile memory 334. In some embodiments, processor 310is coupled with memory 330 and chipset 320. Processor 310 may also becoupled to a wireless antenna 378 to communicate with any deviceconfigured to transmit and/or receive wireless signals. In oneembodiment, an interface for wireless antenna 378 operates in accordancewith, but is not limited to, the IEEE 802.11 standard and its relatedfamily, Home Plug AV (HPAV), Ultra Wide Band (UWB), Bluetooth, WiMax, orany form of wireless communication protocol.

In some embodiments, volatile memory 332 includes, but is not limitedto, Synchronous Dynamic Random-Access Memory (SDRAM), DynamicRandom-Access Memory (DRAM), RAMBUS Dynamic Random-Access Memory(RDRAM), and/or any other type of random access memory device.Non-volatile memory 334 includes, but is not limited to, flash memory,phase change memory (PCM), read-only memory (ROM), electrically erasableprogrammable read-only memory (EEPROM), or any other type ofnon-volatile memory device.

Memory 330 stores information and instructions to be executed byprocessor 310. In one embodiment, memory 330 may also store temporaryvariables or other intermediate information while processor 310 isexecuting instructions. In the illustrated embodiment, chipset 320connects with processor 310 via Point-to-Point (PtP or P-P) interfaces317 and 322. Chipset 320 enables processor 310 to connect to otherelements in system 300. In some embodiments of the example system,interfaces 317 and 322 operate in accordance with a PtP communicationprotocol such as the Intel® QuickPath Interconnect (QPI) or the like. Inother embodiments, a different interconnect may be used.

In some embodiments, chipset 320 is operable to communicate withprocessor 310, 305N, display device 340, and other devices, including abus bridge 372, a smart TV 376, I/O devices 374, nonvolatile memory 360,a storage medium (such as one or more mass storage devices) 362, akeyboard/mouse 364, a network interface 366, and various forms ofconsumer electronics 377 (such as a PDA, smart phone, tablet etc.), etc.In one embodiment, chipset 320 couples with these devices through aninterface 324. Chipset 320 may also be coupled to a wireless antenna 378to communicate with any device configured to transmit and/or receivewireless signals.

Chipset 320 connects to display device 340 via interface 326. Display340 may be, for example, a liquid crystal display (LCD), a lightemitting diode (LED) array, an organic light emitting diode (OLED)array, or any other form of visual display device. In some embodimentsof the example system, processor 310 and chipset 320 are merged into asingle SOC. In addition, chipset 320 connects to one or more buses 350and 355 that interconnect various system elements, such as I/O devices374, nonvolatile memory 360, storage medium 362, a keyboard/mouse 364,and network interface 366. Buses 350 and 355 may be interconnectedtogether via a bus bridge 372.

In one embodiment, mass storage device 362 includes, but is not limitedto, a solid-state drive, a hard disk drive, a universal serial bus flashmemory drive, or any other form of computer data storage medium. In oneembodiment, network interface 366 is implemented by any type ofwell-known network interface standard including, but not limited to, anEthernet interface, a universal serial bus (USB) interface, a PeripheralComponent Interconnect (PCI) Express interface, a wireless interfaceand/or any other suitable type of interface. In one embodiment, thewireless interface operates in accordance with, but is not limited to,the IEEE 802.11 standard and its related family, Home Plug AV (HPAV),Ultra Wide Band (UWB), Bluetooth, WiMax, or any form of wirelesscommunication protocol.

While the modules shown in FIG. 3 are depicted as separate blocks withinthe system 300, the functions performed by some of these blocks may beintegrated within a single semiconductor circuit or may be implementedusing two or more separate integrated circuits. For example, althoughcache memory 316 is depicted as a separate block within processor 310,cache memory 316 (or selected aspects of 316) can be incorporated intoprocessing core 312.

In some examples, the device of FIG. 3 can include a silicon photonicdevice, which can benefit from good heat dissipation. In some examples,the silicon photonic device can include a transmitter, which can includea laser diode that can convert an electrical data signal to an opticaldata signal, and can generate a substantial amount of heat. In someexamples, the silicon photonic device can include a receiver, which caninclude a detector that can convert an optical data signal to anelectrical data signal, and can also generate a substantial amount ofheat. Both a transmitter and a receiver can benefit from efficient heatdissipation, as explained above.

FIG. 4 shows a flowchart of an example of a method 400 for manufacturinga semiconductor device, in accordance with some examples. The method 400can be executed to manufacture the semiconductor device 10 of FIG. 1, aswell as other devices. The method 400 is but one suitable method formanufacturing a semiconductor device; other suitable methods can also beused.

At operation 402, a computing element can be attached to a front side ofa package, the computing element electrically connecting to the package.

At operation 404, an electrical connection can be formed on a back sideof the package, the electrical connection electrically connecting to thepackage.

At operation 406, a voltage regulator can be embedded within thepackage, the voltage regulator configured to accept a first voltage fromthe electrical connection, reduce the first voltage to a second voltage,and deliver the second voltage to the computing element.

In some examples, the voltage regulator can include voltage regulationcircuitry positioned on a base. In some examples, the voltage regulatorcan be embedded by placing the voltage regulation circuitry and the baseonto a first layer of the package, then forming a second layer of thepackage on the voltage regulation circuitry. In some examples, thevoltage regulation circuitry can include features having a first minimumfeature size. In some of these examples, the semiconductor die caninclude features having a second minimum feature size smaller than thefirst minimum feature size.

In some examples, the voltage regulator can be electrically connected tothe semiconductor die by an electrical path having an inductance. Insome examples, the inductance can be provided by a structure of thepackage. In some of these examples, the electrical path can lack anexplicit inductor component.

In the foregoing detailed description, the method and apparatus of thepresent disclosure have been described with reference to specificembodiments thereof. It will, however, be evident that variousmodifications and changes may be made thereto without departing from thebroader spirit and scope of the present disclosure. The presentspecification and figures are accordingly to be regarded as illustrativerather than restrictive.

To further illustrate the device and related method disclosed herein, anon-limiting list of examples is provided below. Each of the followingnon-limiting examples can stand on its own, or can be combined in anypermutation or combination with any one or more of the other examples.

In Example 1, a semiconductor device can include: a package includingcircuitry arranged in layers that are electrically connected to oneanother through electrically conductive vias; a semiconductor diepositioned on a front side of the package and electrically connected tothe package; an electrical connection positioned on the package andelectrically connected to the package; and a voltage regulator embeddedwithin the package, the voltage regulator configured to accept a firstvoltage from the electrical connection, reduce the first voltage to asecond voltage, and deliver the second voltage to the semiconductor die.

In Example 2, the semiconductor device of Example 1 can optionally beconfigured such that the electrical connection is positioned on a backside of the package.

In Example 3, the semiconductor device of any one of Examples 1-2 canoptionally be configured such that the voltage regulator comprisesvoltage regulation circuitry positioned on a base.

In Example 4, the semiconductor device of any one of Examples 1-3 canoptionally be configured such that the voltage regulation circuitry andthe base are embedded between a first layer of the package and a secondlayer of the package.

In Example 5, the semiconductor device of any one of Examples 1-4 canoptionally be configured such that the voltage regulation circuitryincludes features having a first minimum feature size; and thesemiconductor die includes features having a second minimum feature sizesmaller than the first minimum feature size.

In Example 6, the semiconductor device of any one of Examples 1-5 canoptionally be configured such that the voltage regulator is electricallyconnected to the semiconductor die by an electrical path having aninductance; the inductance is provided by a structure of the package;and the electrical path lacks an explicit inductor component.

In Example 7, the semiconductor device of any one of Examples 1-6 canoptionally be configured such that the package is formed as layersdisposed on a substrate; and the voltage regulator is positioned betweenthe substrate and the electrical connection.

In Example 8, the semiconductor device of any one of Examples 1-7 canoptionally be configured such that the first and second voltages aredirect current.

In Example 9, the semiconductor device of any one of Examples 1-8 canoptionally be configured such that the voltage regulator includes fourtransistors that are arranged in series; a first of the four transistorsis a PMOS transistor switched at a frequency and a duty cycle; a secondof the four transistors is a PMOS transistor having a gate attached to adirect current voltage; a third of the four transistors is an NMOStransistor having a gate attached to the direct current voltage; and afourth of the four transistors is an NMOS transistor switched at thefrequency and the duty cycle.

In Example 10, the semiconductor device of any one of Examples 1-9 canoptionally be configured such that the semiconductor die is one of aplurality of semiconductor dies positioned on the front side of thepackage and electrically connected to the package; the electricalconnection is one of a plurality of electrical connections positioned onthe back side of the package and electrically connected to the package;the voltage regulator is one of a plurality of voltage regulatorsembedded within the package; each voltage regulator of the plurality ofvoltage regulators is configured to accept a first voltage from at leastone electrical connection, reduce the first voltage to a second voltage,and deliver the second voltage to a corresponding semiconductor die ofthe plurality of semiconductor dies.

In Example 11, the semiconductor device of any one of Examples 1-10 canoptionally be configured such that the plurality of voltage regulatorsare embedded within a single layer of the package.

In Example 12, the semiconductor device of any one of Examples 1-11 canoptionally be configured such that the plurality of semiconductor diesare arranged as a first two-dimensional array; the plurality of voltageregulators are arranged as a second two-dimensional array; and thesecond two-dimensional array is offset from the first two-dimensionalarray in a direction orthogonal to the first two-dimensional array.

In Example 13, the semiconductor device of any one of Examples 1-12 canoptionally be configured such that the plurality of semiconductor diesare arranged in clusters of four semiconductor dies that share a commoncorner; the plurality of voltage regulators are arranged in clusters offour voltage regulators that share a common corner; and the commoncorners of the voltage regulators are offset from the common corners ofthe semiconductor dies in the direction orthogonal to the firsttwo-dimensional array.

In Example 14, a method for manufacturing a semiconductor device caninclude: attaching a computing element to a front side of a package, thecomputing element electrically connecting to the package; forming anelectrical connection on a back side of the package, the electricalconnection electrically connecting to the package; and embedding avoltage regulator within the package, the voltage regulator configuredto accept a first voltage from the electrical connection, reduce thefirst voltage to a second voltage, and deliver the second voltage to thecomputing element.

In Example 15, the method of Example 14 can optionally be configuredsuch that the voltage regulator comprises voltage regulation circuitrypositioned on a base; and embedding the voltage regulator comprisesplacing the voltage regulation circuitry and the base onto a first layerof the package, then forming a second layer of the package on thevoltage regulation circuitry.

In Example 16, the method of any one of Examples 14-15 can optionally beconfigured such that the voltage regulation circuitry includes featureshaving a first minimum feature size; and the semiconductor die includesfeatures having a second minimum feature size smaller than the firstminimum feature size.

In Example 17, a semiconductor device can include: a package includingcircuitry arranged in layers that are electrically connected to oneanother through electrically conductive vias; a plurality ofsemiconductor dies positioned on a front side of the package andelectrically connected to the package; a plurality of electricalconnections positioned on a back side of the package and electricallyconnected to the package; and a plurality of voltage regulators embeddedwithin the package, each voltage regulator of the plurality of voltageregulators configured to accept a first voltage from an electricalconnection, reduce the first voltage to a second voltage, and deliverthe second voltage to a respective semiconductor die of the plurality ofsemiconductor dies.

In Example 18, the semiconductor device of Example 17 can optionally beconfigured such that the plurality of voltage regulators are embeddedwithin a single layer of the package; the plurality of semiconductordies are arranged as a first two-dimensional array; the plurality ofvoltage regulators are arranged as a second two-dimensional array; andthe second two-dimensional array is offset from the firsttwo-dimensional array in a direction orthogonal to the firsttwo-dimensional array.

In Example 19, the semiconductor device of any of Examples 17-18 canoptionally be configured such that the plurality of semiconductor diesare arranged in clusters of four semiconductor dies that share a commoncorner; the plurality of voltage regulators are arranged in clusters offour voltage regulators that share a common corner; and the commoncorners of the voltage regulators are offset from the common corners ofthe semiconductor dies in the direction orthogonal to the firsttwo-dimensional array.

In Example 20, the semiconductor device of any one of Examples 17-19 canoptionally be configured such that each voltage regulator comprisesvoltage regulation circuitry positioned on a respective base; eachvoltage regulator is embedded by placing the voltage regulationcircuitry and the base onto a first layer of the package, then forming asecond layer of the package on the voltage regulation circuitry; thevoltage regulation circuitries include features having a first minimumfeature size; and the semiconductor dies include features having asecond minimum feature size smaller than the first minimum feature size.

What is claimed is:
 1. A semiconductor device, comprising: a packageincluding circuitry arranged in layers that are electrically connectedto one another through electrically conductive vias; a semiconductor diepositioned on a front side of the package and electrically connected tothe package; an electrical connection positioned on the package andelectrically connected to the package; and a voltage regulator embeddedwithin the package, the voltage regulator configured to accept a firstvoltage from the electrical connection, reduce the first voltage to asecond voltage, and deliver the second voltage to the semiconductor die.2. The semiconductor device of claim 1, wherein the electricalconnection is positioned on a back side of the package.
 3. Thesemiconductor device of claim 1, wherein the voltage regulator comprisesvoltage regulation circuitry positioned on a base.
 4. The semiconductordevice of claim 3, wherein the voltage regulation circuitry and the baseare embedded between a first layer of the package and a second layer ofthe package.
 5. The semiconductor device of claim 4, wherein: thevoltage regulation circuitry includes features having a first minimumfeature size; and the semiconductor die includes features having asecond minimum feature size smaller than the first minimum feature size.6. The semiconductor device of claim 1, wherein: the voltage regulatoris electrically connected to the semiconductor die by an electrical pathhaving an inductance; the inductance is provided by a structure of thepackage; and the electrical path lacks an explicit inductor component.7. The semiconductor device of claim 1, wherein: the package is formedas layers disposed on a substrate; and the voltage regulator ispositioned between the substrate and the electrical connection.
 8. Thesemiconductor device of claim 1, wherein the first and second voltagesare direct current.
 9. The semiconductor device of claim 1, wherein: thevoltage regulator includes four transistors that are arranged in series;a first of the four transistors is a PMOS transistor switched at afrequency and a duty cycle; a second of the four transistors is a PMOStransistor having a gate attached to a direct current voltage; a thirdof the four transistors is an NMOS transistor having a gate attached tothe direct current voltage; and a fourth of the four transistors is anNMOS transistor switched at the frequency and the duty cycle.
 10. Thesemiconductor device of claim 1, wherein: the semiconductor die is oneof a plurality of semiconductor dies positioned on the front side of thepackage and electrically connected to the package; the electricalconnection is one of a plurality of electrical connections positioned onthe back side of the package and electrically connected to the package;the voltage regulator is one of a plurality of voltage regulatorsembedded within the package; and each voltage regulator of the pluralityof voltage regulators is configured to accept a first voltage from atleast one electrical connection, reduce the first voltage to a secondvoltage, and deliver the second voltage to a corresponding semiconductordie of the plurality of semiconductor dies.
 11. The semiconductor deviceof claim 10, wherein the plurality of voltage regulators are embeddedwithin a single layer of the package.
 12. The semiconductor device ofclaim 10, wherein: the plurality of semiconductor dies are arranged as afirst two-dimensional array; the plurality of voltage regulators arearranged as a second two-dimensional array; and the secondtwo-dimensional array is offset from the first two-dimensional array ina direction orthogonal to the first two-dimensional array.
 13. Thesemiconductor device of claim 12, wherein: the plurality ofsemiconductor dies are arranged in clusters of four semiconductor diesthat share a common corner; the plurality of voltage regulators arearranged in clusters of four voltage regulators that share a commoncorner; and the common corners of the voltage regulators are offset fromthe common corners of the semiconductor dies in the direction orthogonalto the first two-dimensional array.
 14. A method for manufacturing asemiconductor device, comprising: attaching a computing element to afront side of a package, the computing element electrically connectingto the package; forming an electrical connection on a back side of thepackage, the electrical connection electrically connecting to thepackage; and embedding a voltage regulator within the package, thevoltage regulator configured to accept a first voltage from theelectrical connection, reduce the first voltage to a second voltage, anddeliver the second voltage to the computing element.
 15. The method ofclaim 14, wherein: the voltage regulator comprises voltage regulationcircuitry positioned on a base; and embedding the voltage regulatorcomprises placing the voltage regulation circuitry and the base onto afirst layer of the package, then forming a second layer of the packageon the voltage regulation circuitry.
 16. The method of claim 15,wherein: the voltage regulation circuitry includes features having afirst minimum feature size; and the semiconductor die includes featureshaving a second minimum feature size smaller than the first minimumfeature size.
 17. A semiconductor device, comprising: a packageincluding circuitry arranged in layers that are electrically connectedto one another through electrically conductive vias; a plurality ofsemiconductor dies positioned on a front side of the package andelectrically connected to the package; a plurality of electricalconnections positioned on a back side of the package and electricallyconnected to the package; and a plurality of voltage regulators embeddedwithin the package, each voltage regulator of the plurality of voltageregulators configured to accept a first voltage from an electricalconnection, reduce the first voltage to a second voltage, and deliverthe second voltage to a respective semiconductor die of the plurality ofsemiconductor dies.
 18. The semiconductor device of claim 17, wherein:the plurality of voltage regulators are embedded within a single layerof the package; the plurality of semiconductor dies are arranged as afirst two-dimensional array; the plurality of voltage regulators arearranged as a second two-dimensional array; and the secondtwo-dimensional array is offset from the first two-dimensional array ina direction orthogonal to the first two-dimensional array.
 19. Thesemiconductor device of claim 18, wherein: the plurality ofsemiconductor dies are arranged in clusters of four semiconductor diesthat share a common corner; the plurality of voltage regulators arearranged in clusters of four voltage regulators that share a commoncorner; and the common corners of the voltage regulators are offset fromthe common corners of the semiconductor dies in the direction orthogonalto the first two-dimensional array.
 20. The semiconductor device ofclaim 17, wherein: each voltage regulator comprises voltage regulationcircuitry positioned on a respective base; each voltage regulator isembedded by placing the voltage regulation circuitry and the base onto afirst layer of the package, then forming a second layer of the packageon the voltage regulation circuitry; the voltage regulation circuitriesinclude features having a first minimum feature size; and thesemiconductor dies include features having a second minimum feature sizesmaller than the first minimum feature size.